DRDN005W-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Terminal Form :

Gull wing

Pin Count :

6

Radiation Hardening :

No

Height :

1mm

Package / Case :

6-TSSOP, SC-88, SOT-363

Transition Frequency :

100MHz

Max Collector Current :

500mA

Collector Emitter Voltage (VCEO) :

80V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Max Breakdown Voltage :

80V

Transistor Type :

NPN + Diode (Isolated)

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

100nA

Collector Emitter Breakdown Voltage :

80V

Collector Emitter Saturation Voltage :

250mV

Max Power Dissipation :

200mW

Base Part Number :

DRDN005

Width :

1.35mm

Published :

2008

Pbfree Code :

yes

JESD-609 Code :

e3

Weight :

6.010099mg

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Length :

2.2mm

Gain Bandwidth Product :

100MHz

Collector Base Voltage (VCBO) :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Mounting Type :

Surface Mount

Polarity :

NPN

Transistor Element Material :

SILICON

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Frequency :

100MHz

Power Dissipation :

200mW

Number of Terminations :

6

Voltage - Rated DC :

80V

Packaging :

Tape and Reel (TR)

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Current Rating :

500mA

Number of Elements :

1