DTA143XCAT116
- Mfr.Part #
- DTA143XCAT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- PNP -100MA -50V DIGITAL TRANSIST
- Stock
- 954
- In Stock :
- 954
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- JESD-30 Code :
- R-PDSO-G3
- Operating Temperature (Max) :
- 150°C
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2016
- Transistor Type :
- PNP - Pre-Biased
- Factory Lead Time :
- 13 Weeks
- Transistor Application :
- SWITCHING
- Frequency - Transition :
- 250MHz
- Configuration :
- SINGLE WITH BUILT-IN RESISTOR
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10mA 5V
- Resistor - Base (R1) :
- 4.7 k Ω
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Pin Count :
- 3
- HTS Code :
- 8541.21.00.75
- Max Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 250MHz
- Resistor - Emitter Base (R2) :
- 10 k Ω
- Collector Emitter Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- PNP
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 200mW
- VCEsat-Max :
- 0.3 V
- Power - Max :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.12
- Current - Collector Cutoff (Max) :
- 500nA
- Datasheets
- DTA143XCAT116

DTA143XCAT116 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ROHM Semiconductor stock available at
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