DTC114TCAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Peak Reflow Temperature (Cel) :

260

Resistor - Base (R1) :

10 k Ω

Max Breakdown Voltage :

50V

Power - Max :

200mW

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

VCEsat-Max :

0.3 V

Additional Feature :

Digital

Frequency - Transition :

250MHz

Transition Frequency :

250MHz

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Max Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Max Collector Current :

100mA

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

10

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Qualification Status :

Not Qualified

Operating Temperature (Max) :

150°C

HTS Code :

8541.21.00.75

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Current - Collector Cutoff (Max) :

500nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

JESD-609 Code :

e1

Published :

2016

Mount :

Surface Mount

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

300mV

Factory Lead Time :

13 Weeks

Transistor Type :

NPN - Pre-Biased