DTC115ECAT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

HTS Code :

8541.21.00.75

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature (Max) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Pin Count :

3

Collector Emitter Breakdown Voltage :

50V

VCEsat-Max :

0.3 V

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

300mV

Max Collector Current :

100mA

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Factory Lead Time :

7 Weeks

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Transition Frequency :

250MHz

Published :

2016

Package / Case :

TO-236-3

Mount :

Surface Mount

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

200mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Max Breakdown Voltage :

50V

Terminal Form :

Gull wing

DC Current Gain-Min (hFE) :

82

Polarity/Channel Type :

NPN

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)