EPC2016

- Mfr.Part #
- EPC2016
- Manufacturer
- EPC
- Package / Case
- Die
- Datasheet
- Download
- Description
- GANFET N-CH 100V 11A DIE
- Stock
- 29,638





- In Stock :
- 29,638
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- Manufacturer :
- EPC
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 16mOhm @ 11A, 5V
- Drain to Source Resistance :
- 12mOhm
- Height :
- 815μm
- Vgs(th) (Max) @ Id :
- 2.5V @ 3mA
- Supplier Device Package :
- Die
- Rds On Max :
- 16 mΩ
- Continuous Drain Current (ID) :
- 18A
- Number of Channels :
- 1
- Vgs (Max) :
- +6V, -4V
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -40°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 420pF @ 50V
- Input Capacitance :
- 420pF
- Max Operating Temperature :
- 150°C
- Package / Case :
- Die
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta
- Drain to Source Voltage (Vdss) :
- 100V
- Drain to Source Breakdown Voltage :
- 100V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 4.5nC @ 5V
- Max Junction Temperature (Tj) :
- 150°C
- Series :
- eGaN®
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -40°C~150°C TJ
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 6V
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V
- Published :
- 2012
- Datasheets
- EPC2016

N-Channel Tape & Reel (TR) 16mOhm @ 11A, 5V +6V, -4V 420pF @ 50V 4.5nC @ 5V 100V Die
EPC2016C Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 420pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 12mOhm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (5V) reduces this device's overall power consumption.
EPC2016C Features
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 100V voltage
single MOSFETs transistor is 12mOhm
a 100V drain to source voltage (Vdss)
EPC2016C Applications
There are a lot of EPC
EPC2016C applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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