EPC2016

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Mfr.Part #
EPC2016
Manufacturer
EPC
Package / Case
Die
Datasheet
Download
Description
GANFET N-CH 100V 11A DIE
Stock
29,638
In Stock :
29,638

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Manufacturer :
EPC
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
16mOhm @ 11A, 5V
Drain to Source Resistance :
12mOhm
Height :
815μm
Vgs(th) (Max) @ Id :
2.5V @ 3mA
Supplier Device Package :
Die
Rds On Max :
16 mΩ
Continuous Drain Current (ID) :
18A
Number of Channels :
1
Vgs (Max) :
+6V, -4V
Mounting Type :
Surface Mount
Min Operating Temperature :
-40°C
Input Capacitance (Ciss) (Max) @ Vds :
420pF @ 50V
Input Capacitance :
420pF
Max Operating Temperature :
150°C
Package / Case :
Die
Current - Continuous Drain (Id) @ 25°C :
18A Ta
Drain to Source Voltage (Vdss) :
100V
Drain to Source Breakdown Voltage :
100V
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
4.5nC @ 5V
Max Junction Temperature (Tj) :
150°C
Series :
eGaN®
Factory Lead Time :
12 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-40°C~150°C TJ
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
6V
Drive Voltage (Max Rds On,Min Rds On) :
5V
Published :
2012
Datasheets
EPC2016
Introducing Transistors - FETs, MOSFETs - Single EPC EPC2016 from Xinshop,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Surface Mount, Package / Case:Die, Operating Temperature:-40°C~150°C TJ, EPC2016 pinout, EPC2016 datasheet PDF, EPC2016 amp .Beyond Transistors - FETs, MOSFETs - Single EPC EPC2016 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

EPC EPC2016


N-Channel Tape & Reel (TR) 16mOhm @ 11A, 5V +6V, -4V 420pF @ 50V 4.5nC @ 5V 100V Die

EPC2016C Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 420pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 12mOhm exists between the drain and source.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (5V) reduces this device's overall power consumption.

EPC2016C Features


a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 100V voltage
single MOSFETs transistor is 12mOhm
a 100V drain to source voltage (Vdss)


EPC2016C Applications


There are a lot of EPC
EPC2016C applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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