FD6M045N06

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

2

Transistor Application :

SWITCHING

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

3890pF @ 25V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Reach Compliance Code :

Unknown

Avalanche Energy Rating (Eas) :

794 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Case Connection :

Isolated

DS Breakdown Voltage-Min :

60V

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

60A

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Number of Terminations :

15

Drain-source On Resistance-Max :

0.0045ohm

Operating Mode :

ENHANCEMENT MODE

Series :

Power-SPM™

Terminal Position :

Zig-Zag

FET Type :

2 N-Channel (Dual)

Package / Case :

EPM15

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 40A, 10V

Pin Count :

15

Qualification Status :

COMMERCIAL

JESD-30 Code :

R-PZIP-T15

Current - Continuous Drain (Id) @ 25°C :

60A

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V