FDA20N50F
- Mfr.Part #
- FDA20N50F
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 22A TO3PN
- Stock
- 387
- In Stock :
- 387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-3P-3, SC-65-3
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 22A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Packaging :
- Tube
- Resistance :
- 260mOhm
- Published :
- 2013
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±30V
- Radiation Hardening :
- No
- Weight :
- 6.401g
- Input Capacitance (Ciss) (Max) @ Vds :
- 3390pF @ 25V
- Number of Elements :
- 1
- Rise Time :
- 120ns
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Height :
- 20.1mm
- Current - Continuous Drain (Id) @ 25°C :
- 22A Tc
- Power Dissipation :
- 388W
- Gate to Source Voltage (Vgs) :
- 30V
- Width :
- 5mm
- Length :
- 15.8mm
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 60 ns
- Drain to Source Breakdown Voltage :
- 500V
- Mount :
- Through Hole
- Series :
- UniFET™
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 11A, 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 2
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation-Max :
- 388W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Turn On Delay Time :
- 45 ns
- Pulsed Drain Current-Max (IDM) :
- 88A
- Gate Charge (Qg) (Max) @ Vgs :
- 65nC @ 10V
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Datasheets
- FDA20N50F

N-Channel Tube 260m Ω @ 11A, 10V ±30V 3390pF @ 25V 65nC @ 10V TO-3P-3, SC-65-3
FDA20N50F Description
FDA20N50F is an N-channel power MOSFET based on planar stripe and DMOS technology. The MOSFET FDA20N50F is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET? MOSFET has been enhanced by lifetime control. Therefore, it can remove the additional components and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. The FDA20N50F is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDA20N50F Features
-
Ros(on)= 220 ms (Typ.) @ VGs= 10V,lp=11A
-
Low Gate Charge (Typ. 50 nC)
-
Low Crss (Typ. 27 pF)
-
100% Avalanche Tested
-
Improved dv/dt Capability
-
RoHS Compliant
FDA20N50F Applications
-
PDP TV
-
Uninterruptible Power Supply
-
AC-DC Power Supply
-
power factor correction (PFC), flat panel display (FPD) TV power, ATX
-
electronic lamp ballasts.
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