FDB6021P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

30m Ω @ 14A, 4.5V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Number of Terminations :

2

Vgs (Max) :

±8V

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

28A Ta

DS Breakdown Voltage-Min :

20V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Power Dissipation-Max :

37W Tc

Mounting Type :

Surface Mount

Operating Temperature :

-65°C~175°C TJ

Drain Current-Max (Abs) (ID) :

28A

Pin Count :

4

Surface Mount :

yes

Drain-source On Resistance-Max :

0.03Ohm

Terminal Position :

Single

Terminal Finish :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.89pF @ 10V