FDB8030L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

160 ns

Element Configuration :

Single

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Series :

PowerTrench®

Rise Time :

185ns

Power Dissipation :

187W

Nominal Vgs :

1.5 V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

80A Ta

Resistance :

3.5mOhm

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Threshold Voltage :

1.5V

Turn On Delay Time :

20 ns

Length :

10.97mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2017

Factory Lead Time :

15 Weeks

Vgs(th) (Max) @ Id :

2V @ 250μA

Continuous Drain Current (ID) :

80A

Weight :

1.31247g

Current Rating :

80A

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

2

Number of Elements :

1

Transistor Application :

SWITCHING

Width :

9.65mm

Operating Temperature :

-65°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

30V

Number of Pins :

3

Height :

4.83mm

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 80A, 10V

Vgs (Max) :

±20V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 15V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Mount :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Power Dissipation-Max :

187W Tc

FET Type :

N-Channel

JESD-609 Code :

e3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 5V

Fall Time (Typ) :

200 ns

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V