FDC606P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Max Junction Temperature (Tj) :

150°C

Turn-Off Delay Time :

89 ns

Terminal Position :

Dual

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Number of Terminations :

6

Power Dissipation :

1.6W

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

6A Ta

Gate to Source Voltage (Vgs) :

8V

Width :

1.7mm

Mounting Type :

Surface Mount

Number of Pins :

6

Series :

PowerTrench®

Drain to Source Voltage (Vdss) :

12V

Drain to Source Breakdown Voltage :

-12V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Turn On Delay Time :

11 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Terminal Form :

Gull wing

Length :

3mm

Current Rating :

-6A

Drain Current-Max (Abs) (ID) :

6A

ECCN Code :

EAR99

Published :

2001

Resistance :

26mOhm

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-6A

Height :

1.1mm

Weight :

36mg

Termination :

SMD/SMT

Mount :

Surface Mount

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

70 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Voltage - Rated DC :

-12V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1699pF @ 6V

Radiation Hardening :

No

Threshold Voltage :

-500mV

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.6W Ta

Lead Free :

Lead Free

Dual Supply Voltage :

-12V

Rise Time :

10ns

Number of Channels :

1

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

10 Weeks

Nominal Vgs :

-500 mV

Rds On (Max) @ Id, Vgs :

26m Ω @ 6A, 4.5V

Vgs (Max) :

±8V

Number of Elements :

1