FDH047AN08A0

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

JESD-609 Code :

e3

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

475 mJ

Published :

2013

Voltage - Rated DC :

75V

Turn-Off Delay Time :

40 ns

Fall Time (Typ) :

45 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 80A, 10V

Power Dissipation-Max :

310W Tc

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Rise Time :

88ns

Lead Free :

Lead Free

Power Dissipation :

310W

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

TO-247-3

Case Connection :

DRAIN

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

15A

Current Rating :

80A

Number of Elements :

1

Mounting Type :

Through Hole

FET Type :

N-Channel

Series :

PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Breakdown Voltage :

75V

Mount :

Through Hole

Resistance :

4.7MOhm

RoHS Status :

ROHS3 Compliant

Weight :

6.39g

Pbfree Code :

yes

Element Configuration :

Single

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Vgs (Max) :

±20V

Turn On Delay Time :

18 ns

Factory Lead Time :

10 Weeks