FDMC8622

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

5.9 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Flat

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Threshold Voltage :

2.9V

Number of Elements :

1

Factory Lead Time :

4 Weeks

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

7.3nC @ 10V

Drain-source On Resistance-Max :

0.056Ohm

Height :

750μm

ECCN Code :

EAR99

Continuous Drain Current (ID) :

16A

Current - Continuous Drain (Id) @ 25°C :

4A Ta 16A Tc

Turn-Off Delay Time :

10.2 ns

Packaging :

Tape and Reel (TR)

Weight :

200mg

Pbfree Code :

yes

JEDEC-95 Code :

MO-240BA

Element Configuration :

Single

Series :

PowerTrench®

Pulsed Drain Current-Max (IDM) :

30A

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Number of Terminations :

5

Nominal Vgs :

2.9 V

Number of Pins :

8

Power Dissipation-Max :

2.5W Ta 31W Tc

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

37 mJ

Radiation Hardening :

No

JESD-609 Code :

e4

Rds On (Max) @ Id, Vgs :

56m Ω @ 4A, 10V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

JESD-30 Code :

R-PDSO-F5

Width :

3.3mm

Input Capacitance (Ciss) (Max) @ Vds :

402pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Additional Feature :

ULTRA-LOW RESISTANCE

Length :

3.3mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain Current-Max (Abs) (ID) :

4A

Rise Time :

1.6ns

Fall Time (Typ) :

2.2 ns

Power Dissipation :

31W

Case Connection :

DRAIN

Package / Case :

8-PowerWDFN

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)