FDMQ8403
- Mfr.Part #
- FDMQ8403
- Manufacturer
- onsemi
- Package / Case
- 12-WDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 4N-CH 100V 3.1A 12MLP
- Stock
- 8,714
- In Stock :
- 8,714
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain to Source Voltage (Vdss) :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 5nC @ 10V
- Case Connection :
- DRAIN SOURCE
- Published :
- 2009
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mount :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Breakdown Voltage :
- 100V
- FET Type :
- 4 N-Channel (H-Bridge)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- ECCN Code :
- EAR99
- Series :
- GreenBridge™ PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 3A, 10V
- Number of Pins :
- 12
- JESD-609 Code :
- e4
- Number of Terminations :
- 12
- Package / Case :
- 12-WDFN Exposed Pad
- Height :
- 750μm
- Turn On Delay Time :
- 4.1 ns
- RoHS Status :
- ROHS3 Compliant
- Length :
- 5mm
- Max Power Dissipation :
- 1.9W
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Factory Lead Time :
- 8 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 215pF @ 15V
- Weight :
- 242.3mg
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Cut Tape (CT)
- Drain-source On Resistance-Max :
- 0.11Ohm
- Continuous Drain Current (ID) :
- 3.1A
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Elements :
- 4
- Rise Time :
- 1.2ns
- Fall Time (Typ) :
- 1.8 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 1.9W
- Radiation Hardening :
- No
- Width :
- 4.5mm
- FET Feature :
- Standard
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 6A
- Lead Free :
- Lead Free
- Configuration :
- COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Finish :
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Turn-Off Delay Time :
- 7.2 ns
- Datasheets
- FDMQ8403

FDMQ8403 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMQ8403 Description
This quad MOSFET solution provides ten-fold improvement in power dissipation over diode bridge.
FDMQ8403 Features
Max rDS(on) = 110 m|? at VGS = 10 V, ID = 3 A
Max rDS(on) = 175 m|? at VGS = 6 V, ID = 2.4 A
Substantial efficiency benefit in PD solutions
RoHS Compliant
FDMQ8403 Applications
Central Office
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