FDMS8050
- Mfr.Part #
- FDMS8050
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 30V 55A 8PQFN
- Stock
- 586
- In Stock :
- 586
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- HTS Code :
- 8541.29.00.95
- JEDEC-95 Code :
- MO-240AA
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 750μA
- Drain Current-Max (Abs) (ID) :
- 55A
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- DRAIN
- Number of Terminations :
- 5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±20V
- Weight :
- 56.5mg
- Element Configuration :
- Single
- Package / Case :
- 8-PowerTDFN
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 30V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Terminal Form :
- NO LEAD
- Gate Charge (Qg) (Max) @ Vgs :
- 285nC @ 10V
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 400A
- Drain to Source Voltage (Vdss) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 0.65m Ω @ 55A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.00065Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 1536 mJ
- JESD-30 Code :
- R-PDSO-N5
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max :
- 156W Tc
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 22610pF @ 15V
- Mount :
- Surface Mount
- Datasheets
- FDMS8050

N-Channel Tape & Reel (TR) 0.65m Ω @ 55A, 10V ±20V 22610pF @ 15V 285nC @ 10V 30V 8-PowerTDFN
FDMS8050 is an N-Channel MOSFET designed to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMS8050 has been optimized for low gate charger and extremely low Rds(on).
The FDMS8050 MOSFET can operate between -55°C and 150°C TJ available in advanced package and silicon combination for low rDS(on).
FDMS8050 Features
Ultra Low RDS(on)
Improve System Efficiency
Optimized for Low Gate Charge
Improve Switching Performance
Advanced Power 5x6mm package
Improve Thermal Conduction
100% UIL tested
RoHS Compliant
FDMS8050 Applications
ORing
DC-DC Synchronous Rectifier
Servers
Netcom
Communication
Cloud Computing
High End Computing
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