FDMS86105

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

1.05mm

Drain to Source Breakdown Voltage :

100V

Current - Continuous Drain (Id) @ 25°C :

6A Ta 26A Tc

JEDEC-95 Code :

MO-240AA

JESD-30 Code :

R-PDSO-F5

ECCN Code :

EAR99

Turn-Off Delay Time :

12 ns

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Number of Elements :

1

Series :

PowerTrench®

Power Dissipation :

48W

Factory Lead Time :

13 Weeks

Package / Case :

8-PowerTDFN

Number of Pins :

8

Pbfree Code :

yes

Rise Time :

2.1ns

Weight :

68.1mg

Turn On Delay Time :

6.7 ns

JESD-609 Code :

e3

FET Type :

N-Channel

Terminal Position :

Dual

Case Connection :

DRAIN

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

2.4 ns

Rds On (Max) @ Id, Vgs :

34m Ω @ 6A, 10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

30A

Radiation Hardening :

No

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Width :

6mm

Drain-source On Resistance-Max :

0.034Ohm

Power Dissipation-Max :

2.5W Ta 48W Tc

Mount :

Surface Mount

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

6A

Input Capacitance (Ciss) (Max) @ Vds :

645pF @ 50V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

6A

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

50 mJ

REACH SVHC :

No SVHC

Element Configuration :

Single

Threshold Voltage :

2.8V

Terminal Form :

Flat