FDMS9600S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Element Configuration :

Dual

Factory Lead Time :

16 Weeks

Series :

PowerTrench®

Lead Free :

Lead Free

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

12A 16A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

JESD-609 Code :

e4

Pbfree Code :

yes

Number of Terminations :

8

Turn-Off Delay Time :

54 ns

Feedback Cap-Max (Crss) :

375 pF

Fall Time (Typ) :

32 ns

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 12A, 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Contact Plating :

Gold

Height :

825μm

Package / Case :

8-PowerWDFN

Width :

6mm

Rise Time :

11ns

Resistance :

13mOhm

Number of Pins :

8

Max Power Dissipation :

1W

Power Dissipation :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

1705pF @ 15V

Weight :

9mg

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Elements :

2

Case Connection :

DRAIN

Published :

2017

Operating Temperature :

-55°C~150°C TJ

Length :

5mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

16A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate