FDS2582

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2002

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

66m Ω @ 4.1A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Continuous Drain Current (ID) :

4.1A

Current Rating :

4.1A

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Terminal Position :

Dual

Turn On Delay Time :

11 ns

Voltage - Rated DC :

150V

Transistor Application :

SWITCHING

Threshold Voltage :

4V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

4mm

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

4.1A Ta

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Contact Plating :

Tin

Fall Time (Typ) :

26 ns

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Lead Free :

Lead Free

Power Dissipation :

2.5W

Number of Elements :

1

Dual Supply Voltage :

150V

Number of Terminations :

8

Length :

5mm

Factory Lead Time :

11 Weeks

Rise Time :

19ns

Input Capacitance (Ciss) (Max) @ Vds :

1290pF @ 25V

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

252 mJ

Resistance :

66mOhm

Number of Pins :

8

Radiation Hardening :

No

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Power Dissipation-Max :

2.5W Ta

Termination :

SMD/SMT

Weight :

130mg

Turn-Off Delay Time :

36 ns

JESD-609 Code :

e4

Height :

1.5mm

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

4 V

Lifecycle Status :

ACTIVE (Last Updated: 23 hours ago)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Drain to Source Breakdown Voltage :

150V

REACH SVHC :

No SVHC