FDS3590
- Mfr.Part #
- FDS3590
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 6.5A 8SOIC
- Stock
- 3,716
- In Stock :
- 3,716
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage - Rated DC :
- 80V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 2.5W Ta
- Weight :
- 130mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 1.5mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1180pF @ 40V
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- Lead Free :
- Lead Free
- Threshold Voltage :
- 4V
- Number of Terminations :
- 8
- Continuous Drain Current (ID) :
- 6.5A
- Rise Time :
- 8ns
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Factory Lead Time :
- 9 Weeks
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 12 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Current Rating :
- 6.5A
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Turn On Delay Time :
- 11 ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Width :
- 4mm
- Turn-Off Delay Time :
- 26 ns
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Length :
- 5mm
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.5W
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 6.5A, 10V
- Vgs (Max) :
- ±20V
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 6.4A
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Resistance :
- 39mOhm
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDS3590

N-Channel Tape & Reel (TR) 39m Ω @ 6.5A, 10V ±20V 1180pF @ 40V 35nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS3590 Description
The ON Semiconductor FDS3590 is an N-Channel MOSFET having an operating voltage of 80V. This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. These MOSFETs have a lower gate charge and faster switching than MOSFETs with comparable RDS(ON) parameters. As a result, driving a MOSFET is easier and safer (even at very high frequencies), and DC/DC power supply systems are more efficient overall.
FDS3590 Features
6.5 A, 80 V
RDS(on) = 39 mΩ @ VGS = 10 V
RDS(on) = 44 mΩ @ VGS = 6 V
Low gate charge
Fast switching speed
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS3590 Applications
Switch Application
Power Management
Industrial
DC-DC Conversion
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