FDS6990AS

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Junction Temperature (Tj) :

150°C

FET Feature :

Logic Level Gate

Dual Supply Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 15V

Number of Channels :

2

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

22m Ω @ 7.5A, 10V

Series :

PowerTrench®, SyncFET™

Width :

4mm

Weight :

187mg

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

24 ns

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

7.5A

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Termination :

SMD/SMT

Rise Time :

8ns

Turn On Delay Time :

8 ns

REACH SVHC :

No SVHC

Nominal Vgs :

1.7 V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

7.5A

Terminal Form :

Gull wing

Element Configuration :

Dual

Threshold Voltage :

1.7V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 1mA

Length :

5mm

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

2 N-Channel (Dual)

Transistor Element Material :

SILICON

Height :

1.75mm

Number of Pins :

8

Factory Lead Time :

10 Weeks

Continuous Drain Current (ID) :

7.5mA

Number of Elements :

2

Fall Time (Typ) :

8 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Resistance :

22mOhm

Drain to Source Breakdown Voltage :

30V

Max Power Dissipation :

900mW

Transistor Application :

SWITCHING

Published :

2005

JESD-609 Code :

e3