FDU6680

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Mfr.Part #
FDU6680
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 30V 12A/46A IPAK
Stock
20,615
In Stock :
20,615

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 5V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
1.23pF @ 15V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Drain-source On Resistance-Max :
0.01Ohm
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Unknown
Rds On (Max) @ Id, Vgs :
10m Ω @ 12A, 10V
Pulsed Drain Current-Max (IDM) :
100A
Pin Count :
3
Avalanche Energy Rating (Eas) :
180 mJ
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
30V
Vgs(th) (Max) @ Id :
3V @ 250µA
Operating Temperature :
-55°C~175°C TJ
Drain to Source Voltage (Vdss) :
30V
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
Not Applicable
Series :
PowerTrench®
Terminal Finish :
MATTE TIN
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
12A Ta 46A Tc
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
12A
Qualification Status :
COMMERCIAL
Pbfree Code :
yes
Mounting Type :
Through Hole
Surface Mount :
No
JESD-609 Code :
e3
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSIP-T3
Power Dissipation-Max :
3.3W Ta 56W Tc
Datasheets
FDU6680
Introducing Transistors - FETs, MOSFETs - Single onsemi FDU6680 from Xinshop,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, FDU6680 pinout, FDU6680 datasheet PDF, FDU6680 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDU6680 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDU6680


N-Channel Tube 10m Ω @ 12A, 10V ±20V 1.23pF @ 15V 18nC @ 5V 30V TO-251-3 Short Leads, IPak, TO-251AA

FDU6680 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 180 mJ.A device's maximal input capacitance is 1.23pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 12A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

FDU6680 Features


the avalanche energy rating (Eas) is 180 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)


FDU6680 Applications


There are a lot of Rochester Electronics, LLC
FDU6680 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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