FFB5551

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Form :

Gull wing

Power Dissipation :

200mW

Package / Case :

6-TSSOP, SC-88, SOT-363

Radiation Hardening :

No

Transistor Element Material :

SILICON

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

6V

Number of Pins :

6

Collector Emitter Saturation Voltage :

200mV

Width :

1.25mm

Weight :

28mg

Height :

1mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Collector Emitter Voltage (VCEO) :

160V

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Gain Bandwidth Product :

300MHz

Polarity :

NPN

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Surface Mount

hFE Min :

80

Collector Base Voltage (VCBO) :

180V

Mount :

Surface Mount

Length :

2mm

Max Collector Current :

200mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Transition Frequency :

100MHz

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Frequency :

300MHz

Max Power Dissipation :

200mW

Operating Temperature :

-55°C~150°C TJ

Current Rating :

200mA

Base Part Number :

FFB5551

Max Breakdown Voltage :

160V

Transistor Type :

2 NPN (Dual)

Current - Collector Cutoff (Max) :

50nA ICBO

Pbfree Code :

yes

Voltage - Rated DC :

160V

Collector Emitter Breakdown Voltage :

160V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Number of Terminations :

6

Number of Elements :

2