FKV550N
- Mfr.Part #
- FKV550N
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 50A TO220F
- Stock
- 2,738
- In Stock :
- 2,738
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Pin Count :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Polarity/Channel Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 25A, 10V
- Qualification Status :
- Not Qualified
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.29.00.95
- Package :
- Bulk
- Terminal Form :
- THROUGH-HOLE
- Package Shape :
- RECTANGULAR
- Series :
- -
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 35W Tc
- FET Feature :
- -
- Supplier Device Package :
- TO-220F
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Reach Compliance Code :
- Unknown
- Rds On Max :
- 15 mΩ
- Vgs (Max) :
- ±20V
- Power Dissipation (Max) :
- 35W (Tc)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- No
- Operating Temperature :
- 150°C TJ
- Product Status :
- Active
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Number of Terminals :
- 3
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.015Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- DS Breakdown Voltage-Min :
- 50V
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Base Product Number :
- FKV550
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 4.2V @ 250μA
- Number of Terminations :
- 3
- Input Capacitance :
- 2 nF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T3
- Max Power Dissipation :
- 35 W
- JEDEC-95 Code :
- TO-220AB
- Manufacturer :
- Sanken Electric Co Ltd
- Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 50V
- Pulsed Drain Current-Max (IDM) :
- 150 A
- Continuous Drain Current (ID) :
- 50A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 10V
- RoHS :
- Compliant
- Published :
- 2012
- Current - Continuous Drain (Id) @ 25°C :
- 50A Ta
- Datasheets
- FKV550N

N-Channel Bulk 15m Ω @ 25A, 10V ±20V 2000pF @ 10V 50V TO-220-3 Full Pack
FKV550N Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 150 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2000pF @ 10V.This device conducts a continuous drain current (ID) of 50A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 150 A.A normal operation of the DS requires keeping the breakdown voltage above 50V.This transistor requires a drain-source voltage (Vdss) of 50V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
FKV550N Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 50A
based on its rated peak drain current 150 A.
a 50V drain to source voltage (Vdss)
FKV550N Applications
There are a lot of Sanken
FKV550N applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FKV550T | Sanken Electric Co., Ltd. | 6,957 | MOSFET N-CH 50V 50A TO220F |
| FKV575 | Sanken Electric Co., Ltd. | 3,290 | MOSFET N-CH 50V 75A TO220 |
















