FMB200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

Polarity :

PNP

Transition Frequency :

300MHz

Packaging :

Tape and Reel (TR)

hFE Min :

100

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Weight :

36mg

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Pins :

6

Max Power Dissipation :

700mW

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

400mV

Max Breakdown Voltage :

45V

Voltage - Rated DC :

-45V

Operating Temperature :

-55°C~150°C TJ

Width :

1.7mm

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

-6V

Current Rating :

-500mA

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

45V

Power Dissipation :

700mW

Collector Base Voltage (VCBO) :

-60V

Factory Lead Time :

28 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

45V

Max Collector Current :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Number of Elements :

2

Frequency :

300MHz

Terminal Form :

Gull wing

Length :

3mm

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Mount :

Surface Mount

Mounting Type :

Surface Mount

Base Part Number :

FMB200

Gain Bandwidth Product :

300MHz

Current - Collector Cutoff (Max) :

50nA

Height :

1mm

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Published :

2017

JESD-609 Code :

e3

Lifecycle Status :

LIFETIME (Last Updated: 5 days ago)

Transistor Type :

2 PNP (Dual)

ECCN Code :

EAR99