FQA11N90C-F109

Manufacturer :

onsemi

Product Category :

Specialized ICs

Threshold Voltage :

5V

Rise Time :

130ns

Gate to Source Voltage (Vgs) :

30V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Fall Time (Typ) :

85 ns

FET Type :

N-Channel

Series :

QFET®

Element Configuration :

Single

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Factory Lead Time :

10 Weeks

Packaging :

Tube

Power Dissipation :

300W

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Lead Free :

Lead Free

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Number of Elements :

1

Package / Case :

TO-3P-3, SC-65-3

Height :

18.9mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2014

Avalanche Energy Rating (Eas) :

960 mJ

Width :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

44A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

60 ns

Length :

15.8mm

Pbfree Code :

yes

Number of Pins :

3

Turn-Off Delay Time :

130 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Resistance :

1.1Ohm

Continuous Drain Current (ID) :

11A

Power Dissipation-Max :

300W Tc

Weight :

6.401g

Number of Terminations :

3

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3290pF @ 25V

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

900V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5V @ 250μA