FQA28N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

28.4A Tc

Drain Current-Max (Abs) (ID) :

28.4A

Input Capacitance (Ciss) (Max) @ Vds :

5.6pF @ 25V

Rds On (Max) @ Id, Vgs :

160m Ω @ 14.2A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

113.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Drain-source On Resistance-Max :

0.16Ohm

Series :

FRFET®

Reach Compliance Code :

Unknown

Package / Case :

TO-3P-3, SC-65-3

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Pbfree Code :

yes

DS Breakdown Voltage-Min :

500V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Power Dissipation-Max :

310W Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Terminal Finish :

MATTE TIN

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

COMMERCIAL

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

500V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Application :

SWITCHING

Vgs (Max) :

±30V

JESD-609 Code :

e3

Surface Mount :

No

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

1300 mJ