FQA28N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

113.6A

Reach Compliance Code :

Unknown

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

310W Tc

Input Capacitance (Ciss) (Max) @ Vds :

5.6pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.16Ohm

Peak Reflow Temperature (Cel) :

Not Applicable

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

500V

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

FET Type :

N-Channel

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

28.4A Tc

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

1300 mJ

Pin Count :

3

Rds On (Max) @ Id, Vgs :

160m Ω @ 14.2A, 10V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

500V

Series :

FRFET®

Drain Current-Max (Abs) (ID) :

28.4A

Number of Terminations :

3

Vgs (Max) :

±30V

Surface Mount :

No

Qualification Status :

COMMERCIAL

Package / Case :

TO-3P-3, SC-65-3