FQA7N80C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

7A

Number of Terminations :

3

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

1.68pF @ 25V

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

JESD-609 Code :

e3

Package / Case :

TO-3P-3, SC-65-3

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

580 mJ

Surface Mount :

No

DS Breakdown Voltage-Min :

800V

Mounting Type :

Through Hole

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

800V

Power Dissipation-Max :

198W Tc

Pulsed Drain Current-Max (IDM) :

28A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Number of Elements :

1

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

1.9 Ω @ 3.5A, 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Vgs (Max) :

±30V