FQA90N08

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Resistance :

16mOhm

Operating Mode :

ENHANCEMENT MODE

Series :

QFET®

Operating Temperature :

-55°C~175°C TJ

Current Rating :

90A

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Power Dissipation-Max :

214W Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3250pF @ 25V

Voltage - Rated DC :

80V

Number of Elements :

1

Drain to Source Breakdown Voltage :

80V

Mounting Type :

Through Hole

Power Dissipation :

214W

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

160 ns

Turn-Off Delay Time :

100 ns

Pbfree Code :

yes

Transistor Element Material :

SILICON

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

16m Ω @ 45A, 10V

Gate to Source Voltage (Vgs) :

25V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Published :

2013

Number of Pins :

3

Lead Free :

Lead Free

Factory Lead Time :

9 Weeks

Rise Time :

360ns

Vgs (Max) :

±25V

Package / Case :

TO-3P-3, SC-65-3

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

90A

Turn On Delay Time :

30 ns

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Weight :

6.401g