FQD5N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Reach Compliance Code :

Unknown

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

430pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Power Dissipation-Max :

2.5W Ta 45W Tc

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Number of Terminations :

2

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

340 mJ

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.2A, 10V

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Drain-source On Resistance-Max :

0.9Ohm

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

300V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

17.6A

Series :

QFET®

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain Current-Max (Abs) (ID) :

4.4A

RoHS Status :

ROHS3 Compliant

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

300V