FQD6N40CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Gate to Source Voltage (Vgs) :

30V

Rise Time :

65ns

Voltage - Rated DC :

400V

JEDEC-95 Code :

TO-252AA

FET Type :

N-Channel

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

QFET®

Lead Free :

Lead Free

Power Dissipation-Max :

2.5W Ta 48W Tc

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

400V

Resistance :

1Ohm

Additional Feature :

FAST SWITCHING

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.25A, 10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

625pF @ 25V

Transistor Application :

SWITCHING

Weight :

260.37mg

Continuous Drain Current (ID) :

4.5A

Length :

6.6mm

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

2V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.1mm

RoHS Status :

ROHS3 Compliant

Current Rating :

4.5A

Terminal Finish :

Tin (Sn)

Height :

2.3mm

Factory Lead Time :

4 Weeks

Fall Time (Typ) :

38 ns

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Turn-Off Delay Time :

21 ns

Case Connection :

DRAIN

Number of Elements :

1

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

270 mJ

Turn On Delay Time :

13 ns