FQH44N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

180W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

530 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Transistor Application :

SWITCHING

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

192A

JEDEC-95 Code :

TO-247AB

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±25V

Drain Current-Max (Abs) (ID) :

48A

Number of Terminations :

3

Published :

2004

Drain-source On Resistance-Max :

0.039Ohm

Rds On (Max) @ Id, Vgs :

39m Ω @ 24A, 10V