FQL50N40
- Mfr.Part #
- FQL50N40
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 50A TO264-3
- Stock
- 13,850
- In Stock :
- 13,850
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 50A
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.075Ohm
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 400V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 7.5pF @ 25V
- Surface Mount :
- No
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- QFET®
- Terminal Finish :
- MATTE TIN
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Position :
- Single
- Avalanche Energy Rating (Eas) :
- 1860 mJ
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Pin Count :
- 3
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Power Dissipation-Max :
- 460W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 25A, 10V
- Pulsed Drain Current-Max (IDM) :
- 200A
- Gate Charge (Qg) (Max) @ Vgs :
- 210nC @ 10V
- Vgs (Max) :
- ±30V
- Qualification Status :
- COMMERCIAL
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Peak Reflow Temperature (Cel) :
- Not Applicable
- JESD-30 Code :
- R-PSFM-T3
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 400V
- JESD-609 Code :
- e3
- Datasheets
- FQL50N40

N-Channel Tube 75m Ω @ 25A, 10V ±30V 7.5pF @ 25V 210nC @ 10V 400V TO-264-3, TO-264AA
FQL50N40 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1860 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 7.5pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 50A.Peak drain current is 200A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 400V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FQL50N40 Features
the avalanche energy rating (Eas) is 1860 mJ
based on its rated peak drain current 200A.
a 400V drain to source voltage (Vdss)
FQL50N40 Applications
There are a lot of Rochester Electronics, LLC
FQL50N40 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FQL50N40 | onsemi | 338 | MOSFET N-CH 400V 50A TO264-3 |
















