FQP14N15
- Mfr.Part #
- FQP14N15
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 14.4A TO220-3
- Stock
- 22,645
- In Stock :
- 22,645
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 57.6A
- Drain to Source Voltage (Vdss) :
- 150V
- Terminal Finish :
- Tin
- Input Capacitance (Ciss) (Max) @ Vds :
- 715pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- QFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 14.4A
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 150V
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Power Dissipation-Max :
- 104W Tc
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 14.4A Tc
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Drain-source On Resistance-Max :
- 0.21Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- COMMERCIAL
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 7.2A, 10V
- Vgs (Max) :
- ±25V
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Datasheets
- FQP14N15

N-Channel Tube 210m Ω @ 7.2A, 10V ±25V 715pF @ 25V 23nC @ 10V 150V TO-220-3
FQP14N15 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 715pF @ 25V.A device's drain current is its maximum continuous current, and this device's drain current is 14.4A.A maximum pulsed drain current of 57.6A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
FQP14N15 Features
the avalanche energy rating (Eas) is 200 mJ
based on its rated peak drain current 57.6A.
a 150V drain to source voltage (Vdss)
FQP14N15 Applications
There are a lot of Rochester Electronics, LLC
FQP14N15 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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