FQP3P50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

45 ns

Number of Elements :

1

Avalanche Energy Rating (Eas) :

250 mJ

Element Configuration :

Single

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

85W

Height :

9.4mm

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

FET Type :

P-Channel

Contact Plating :

Tin

Pbfree Code :

yes

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Length :

10.1mm

Turn On Delay Time :

12 ns

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Number of Pins :

3

Turn-Off Delay Time :

35 ns

Package / Case :

TO-220-3

Published :

2017

Width :

4.7mm

Radiation Hardening :

No

Power Dissipation-Max :

85W Tc

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

2.7A

Vgs (Max) :

±30V

Resistance :

4.9Ohm

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Voltage - Rated DC :

-500V

Nominal Vgs :

-5 V

Rds On (Max) @ Id, Vgs :

4.9 Ω @ 1.35A, 10V

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Lead Free :

Lead Free

Weight :

1.8g

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

-500V

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

QFET®

Transistor Element Material :

SILICON

Current Rating :

-2.7A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

-500V

RoHS Status :

ROHS3 Compliant

Rise Time :

56ns