FQP5N60C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Height :

9.4mm

REACH SVHC :

No SVHC

Mount :

Through Hole

Current Rating :

4.5A

ECCN Code :

EAR99

Length :

10.1mm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

JESD-609 Code :

e3

FET Type :

N-Channel

Vgs (Max) :

±30V

Power Dissipation-Max :

100W Tc

Rise Time :

42ns

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 2.25A, 10V

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

4.5A

Terminal Finish :

Tin (Sn)

Power Dissipation :

100W

Number of Terminations :

3

Drain to Source Breakdown Voltage :

600V

Turn-Off Delay Time :

38 ns

Number of Pins :

3

Mounting Type :

Through Hole

Published :

2013

Number of Elements :

1

Element Configuration :

Single

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

600V

Turn On Delay Time :

10 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tube

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

4V

Weight :

1.8g

Fall Time (Typ) :

46 ns

Width :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Transistor Element Material :

SILICON

Resistance :

2.5Ohm

Series :

QFET®