FS100R12KT4BOSA1

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Mfr.Part #
FS100R12KT4BOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 100A 515W
Stock
10
In Stock :
10

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Reach Compliance Code :
Compliant
Input Capacitance (Cies) @ Vce :
6.3nF @ 25V
Published :
2002
JESD-30 Code :
R-XUFM-X25
Input :
Standard
Transistor Element Material :
SILICON
Case Connection :
Isolated
Voltage - Collector Emitter Breakdown (Max) :
1200V
RoHS Status :
RoHS Compliant
Number of Elements :
6
Polarity/Channel Type :
N-Channel
Terminal Position :
UPPER
Operating Temperature :
-40°C~150°C
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 100A
Turn On Time :
185 ns
Current - Collector Cutoff (Max) :
1mA
Terminal Form :
UNSPECIFIED
NTC Thermistor :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
No
IGBT Type :
Trench Field Stop
Package / Case :
Module
Factory Lead Time :
16 Weeks
Number of Terminations :
25
Mounting Type :
Chassis Mount
Power - Max :
515W
ECCN Code :
EAR99
Pin Count :
25
Configuration :
Three Phase Inverter
Current - Collector (Ic) (Max) :
100A
Surface Mount :
No
Turn Off Time-Nom (toff) :
490 ns
Datasheets
FS100R12KT4BOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FS100R12KT4BOSA1 from Xinshop,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C, Package / Case:Module, Number of Terminations:25, Mounting Type:Chassis Mount, FS100R12KT4BOSA1 pinout, FS100R12KT4BOSA1 datasheet PDF, FS100R12KT4BOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FS100R12KT4BOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



FS100R12KT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FS100R12KT4BOSA1 Description


FS100R12KT4BOSA1 is a 1200v EconoPACK?2 module with trench/field stop IGBT4 and Emitter.  Controlled4 Diode. The Infineon FS100R12KT4BOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Pro audio, video & signage, Personal electronics, and PC & notebook applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor FS100R12KT4BOSA1 is in the Tray package with 515W Power dissipation.



FS100R12KT4BOSA1 Features


Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 100A

Repetitive peak collector current Tp = 1 ms: 200A

Total power dissipation Tc = 25°C, Tvj max = 175°C: 515W

Gate-emitter peak voltage: ±20V



FS100R12KT4BOSA1 Applications


Communications equipment 

Datacom module 

Industrial 

Pro audio, video & signage 

Personal electronics 

PC & notebooks


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