FS100R12KT4GB11BOSA1
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- Mfr.Part #
- FS100R12KT4GB11BOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 1200V 100A 515W
- Stock
- 7,851
- In Stock ：
- 7,851
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Published :
- 2002
- Turn Off Time-Nom (toff) :
- 570 ns
- Input :
- Standard
- Surface Mount :
- No
- Configuration :
- Three Phase Inverter
- Package / Case :
- Module
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Temperature :
- -40°C~150°C
- Polarity/Channel Type :
- N-Channel
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- NTC Thermistor :
- yes
- Power - Max :
- 515W
- Mounting Type :
- Chassis Mount
- Input Capacitance (Cies) @ Vce :
- 6.3nF @ 25V
- Transistor Element Material :
- SILICON
- Terminal Position :
- UPPER
- Additional Feature :
- UL RECOGNIZED
- Halogen Free :
- Not Halogen Free
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- UNSPECIFIED
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Number of Elements :
- 6
- Turn On Time :
- 165 ns
- Factory Lead Time :
- 16 Weeks
- Number of Terminations :
- 35
- Current - Collector Cutoff (Max) :
- 1mA
- RoHS Status :
- RoHS Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 100A
- JESD-30 Code :
- R-XUFM-X35
- Transistor Application :
- POWER CONTROL
- IGBT Type :
- Trench Field Stop
- Current - Collector (Ic) (Max) :
- 100A
- ECCN Code :
- EAR99
- Datasheets
- FS100R12KT4GB11BOSA1
FS100R12KT4GB11BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FS100R12KT4GB11BOSA1 Description
FS100R12KT4GB11BOSA1 developed by Infineon Technologies is a type of EconoPACK?3 module PressFIT with trench/fieldstop IGBT4 and emitter controlled4 diode. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of power transistor (Giant Transistor-GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.
FS100R12KT4GB11BOSA1 Features
Energy saving
Easy installation and maintenance
Stable heat dissipation
High efficiency diode
FS100R12KT4GB11BOSA1 Applications
Rail transit
Smart grid
Aerospace
Electric vehicles
New energy equipment
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