G3R20MT12N

Manufacturer :

GeneSiC Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C ~ 175°C (TJ)

Series :

G3R™

Drive Voltage (Max Rds On, Min Rds On) :

15V

Packaging :

Bulk

Vgs(th) (Max) @ Id :

2.69V @ 15mA

Supplier Device Package :

SOT-227

Number of Channels :

1 Channel

Operating Supply Voltage (Min) :

2.25(V)

Technology :

SiCFET (Silicon Carbide)

Channel Mode :

Enhancement

Frequency Stability :

±50(ppm)

Transistor Polarity :

N-Channel

Package / Case :

QFN

Maximum Operating Temperature :

+ 175 C

Standard Frequency :

50

Rds On (Max) @ Id, Vgs :

24mOhm @ 60A, 15V

Power Dissipation :

365W

Gate Charge (Qg) (Max) @ Vgs :

219 nC @ 15 V

Product Status :

Active

Drain to Source Voltage (Vdss) :

1200 V

Base Product Number :

G3R20

Continuous Drain Current Id :

105A

Vgs (Max) :

+20V, -10V

Minimum Operating Temperature :

- 55 C

Power Dissipation (Max) :

365W (Tc)

Current - Continuous Drain (Id) @ 25°C :

105A (Tc)

FET Feature :

-

Input Capacitance (Ciss) (Max) @ Vds :

5873 pF @ 800 V

Operating Temp Range :

-40C to 85C

Package :

Tube

FET Type :

N-Channel

Programmable :

No

Type :

Clock Oscillator

Mounting Style :

SMD/SMT

Symmetry Max :

55(%)

Mounting Type :

Chassis Mount

Channel Type :

N Channel

Operating Supply Voltage (Max) :

2.75(V)