HAT2199R-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Reach Compliance Code :

Compliant

Factory Lead Time :

1 Week

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

Peak Reflow Temperature (Cel) :

260

Power Dissipation (Max) :

2W (Ta)

Drain Current-Max (Abs) (ID) :

11 A

Mounting Type :

Surface Mount

Channel Type :

N

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

30 V

DS Breakdown Voltage-Min :

30 V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.025 Ω

Continuous Drain Current Id :

11

Subcategory :

FET General Purpose Power

Input Capacitance (Ciss) (Max) @ Vds :

1060 pF @ 10 V

Rds On (Max) @ Id, Vgs :

16.5mOhm @ 5.5A, 10V

Package Shape :

RECTANGULAR

Technology :

MOSFET (Metal Oxide)

FET Type :

N-Channel

Series :

-

Package :

Bulk

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Number of Terminals :

8

Surface Mount :

yes

Vgs(th) (Max) @ Id :

-

Supplier Device Package :

8-SOP

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

88 A

Operating Temperature :

150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 4.5 V

FET Feature :

-

Brand Name :

Renesas

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Pin Count :

8

Power Dissipation-Max (Abs) :

2 W

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Manufacturer :

Renesas Electronics Corporation

Product Status :

Obsolete

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99