HCT7000M
- Mfr.Part #
- HCT7000M
- Manufacturer
- TT Electronics
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 200MA 3SMD
- Stock
- 28,603
- In Stock :
- 28,603
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- Manufacturer :
- TT Electronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 15 Weeks
- Rds On Max :
- 5 Ω
- Turn-Off Delay Time :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 200mA Ta
- Rds On (Max) @ Id, Vgs :
- 5Ohm @ 500mA, 10V
- Height :
- 1.3716mm
- Supplier Device Package :
- 3-SMD
- Power Dissipation :
- 300mW
- Vgs (Max) :
- ±40V
- Element Configuration :
- Single
- Width :
- 2.667mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 60pF @ 25V
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 40V
- Continuous Drain Current (ID) :
- 200mA
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 3.175mm
- Number of Pins :
- 3
- Turn On Delay Time :
- 10 ns
- Input Capacitance :
- 60pF
- Packaging :
- Bulk
- Power Dissipation-Max :
- 300mW Ta
- FET Type :
- N-Channel
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- 3-SMD, No Lead
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 60V
- Drain to Source Resistance :
- 5Ohm
- Published :
- 1997
- Datasheets
- HCT7000M

N-Channel Bulk 5Ohm @ 500mA, 10V ±40V 60pF @ 25V 60V 3-SMD, No Lead
HCT7000M Overview
A device's maximum input capacitance is 60pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 10 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 5Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 40V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
HCT7000M Features
a continuous drain current (ID) of 200mA
the turn-off delay time is 10 ns
single MOSFETs transistor is 5Ohm
a 60V drain to source voltage (Vdss)
HCT7000M Applications
There are a lot of TT Electronics/Optek Technology
HCT7000M applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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