HUF75307D3

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

90m Ω @ 15A, 10V

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

55V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

JESD-609 Code :

e3

JESD-30 Code :

R-PSIP-T3

Pbfree Code :

yes

Power Dissipation-Max :

45W Tc

Drain-source On Resistance-Max :

0.09Ohm

Terminal Finish :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Number of Elements :

1

Number of Terminations :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

UltraFET™

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 20V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

15A

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±20V