HYB25D512800CE-5

Manufacturer :

Qimonda

Product Category :

Memory

Mounting Type :

Surface Mount

Supply Voltage :

2.5V

Qualification Status :

Not Qualified

Sequential Burst Length :

248

Refresh Cycles :

8192

JESD-609 Code :

e3

Memory Size :

512Mb 64M x 8

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Output Characteristics :

3-STATE

Access Time :

200 µs

Memory Width :

8

Number of Pins :

66

Power Supplies :

2.6V

Memory Density :

536870912 bit

Height Seated (Max) :

1.2mm

Length :

22.22mm

Operating Mode :

SYNCHRONOUS

Surface Mount :

yes

Memory Interface :

Parallel

Published :

2007

Width :

10.16mm

Terminal Pitch :

0.65mm

Pin Count :

66

Terminal Position :

Dual

Voltage - Supply :

2.3V~2.7V

Organization :

64MX8

Additional Feature :

AUTO/SELF REFRESH

Clock Frequency :

200MHz

Packaging :

Tape and Reel (TR)

Supply Voltage-Min (Vsup) :

2.3V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Number of Functions :

1

Supply Current-Max :

0.23mA

Peak Reflow Temperature (Cel) :

260

I/O Type :

COMMON

HTS Code :

8542.32.00.28

Number of Ports :

1

Operating Temperature :

0°C~70°C TA

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Standby Current-Max :

0.0046A

Supply Voltage-Max (Vsup) :

2.7V

Memory Format :

DRAM

Memory Type :

Volatile

Interleaved Burst Length :

248

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

66

Moisture Sensitivity Level (MSL) :

1 (Unlimited)