IPB65R660CFDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.66Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Delay Time :

9 ns

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 100V

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

6A

Rds On (Max) @ Id, Vgs :

660m Ω @ 2.1A, 10V

Avalanche Energy Rating (Eas) :

115 mJ

Pulsed Drain Current-Max (IDM) :

17A

Number of Elements :

1

Published :

2008

Pbfree Code :

No

Case Connection :

DRAIN

Pin Count :

4

Terminal Form :

Gull wing

FET Type :

N-Channel

Rise Time :

8ns

Power Dissipation-Max :

62.5W Tc

Turn-Off Delay Time :

40 ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Max Dual Supply Voltage :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

10 ns

RoHS Status :

RoHS Compliant

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™

Drain Current-Max (Abs) (ID) :

6A

Vgs (Max) :

±20V

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Lead Free :

Contains Lead

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single