IPF06N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2008

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

350A

JESD-609 Code :

e3

Power Dissipation-Max :

83W Tc

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

5.7m Ω @ 30A, 10V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

2653pF @ 15V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

25V

Drain Current-Max (Abs) (ID) :

50A

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

25V

Avalanche Energy Rating (Eas) :

225 mJ

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2V @ 40µA

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Mounting Type :

Surface Mount

Number of Elements :

1

Pin Count :

4

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain-source On Resistance-Max :

0.0094Ohm

Series :

OptiMOS™