IPG20N10S4L35ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

Automotive, AEC-Q101, OptiMOS™

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Lead Free :

Contains Lead

Operating Temperature :

-55°C~175°C TJ

Max Dual Supply Voltage :

100V

Rds On (Max) @ Id, Vgs :

35m Ω @ 17A, 10V

Number of Elements :

2

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Power Dissipation :

43W

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

20A

Rise Time :

2ns

Fall Time (Typ) :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.1V @ 16μA

Halogen Free :

Halogen Free

Published :

2012

Gate Charge (Qg) (Max) @ Vgs :

17.4nC @ 10V

Number of Pins :

8

ECCN Code :

EAR99

Package / Case :

8-PowerVDFN

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1105pF @ 25V

Gate to Source Voltage (Vgs) :

16V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

18 ns

Turn On Delay Time :

3 ns

Terminal Finish :

Tin (Sn)

Factory Lead Time :

12 Weeks

Max Power Dissipation :

43W