IPP80N04S3H4AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.0048Ohm

Published :

2008

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

115W Tc

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Rds On (Max) @ Id, Vgs :

4.8m Ω @ 80A, 10V

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

370 mJ

Pulsed Drain Current-Max (IDM) :

320A

Terminal Position :

Single

DS Breakdown Voltage-Min :

40V

Vgs(th) (Max) @ Id :

4V @ 65μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Drain Current-Max (Abs) (ID) :

80A

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 25V

Packaging :

Tube

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

RoHS Compliant