IR2011SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn)

Rise Time :

50ns

Width :

3.9878mm

Mount :

Surface Mount

Max Power Dissipation :

625mW

Driven Configuration :

High-Side or Low-Side

Max Output Current :

1A

Fall Time (Typ) :

35 ns

Number of Pins :

8

Packaging :

Tube

High Side Voltage - Max (Bootstrap) :

200V

REACH SVHC :

No SVHC

Base Part Number :

IR2011SPBF

Length :

4.9784mm

Interface IC Type :

HALF BRIDGE BASED MOSFET DRIVER

Output Voltage :

10V

Logic Voltage - VIL, VIH :

0.7V 2.2V

Peak Reflow Temperature (Cel) :

260

Gate Type :

N-Channel MOSFET

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Weight :

540.001716mg

Published :

1996

Voltage - Supply :

10V~20V

Propagation Delay :

80 ns

Output Current :

1A

Operating Temperature :

-40°C~150°C TJ

Power Dissipation :

625mW

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Lead Free :

Lead Free

Number of Functions :

1

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

12 Weeks

Nominal Supply Current :

230μA

Number of Outputs :

2

Current - Peak Output (Source, Sink) :

1A 1A

Channel Type :

Independent

Terminal Form :

Gull wing

Power Supplies :

15V

Operating Supply Current :

230μA

High Side Driver :

yes

RoHS Status :

ROHS3 Compliant

Release Time :

60 ns

Input Type :

Inverting

Rise / Fall Time (Typ) :

35ns 20ns

Supply Voltage :

15V

Turn-Off Delay Time :

20 ns

Output Peak Current Limit-Nom :

1A

Max Supply Current :

230μA

JESD-609 Code :

e3

Height :

1.4986mm

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Terminations :

8

Turn On Delay Time :

20 ns

Terminal Position :

Dual