IRC640PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

45 ns

Pulsed Drain Current-Max (IDM) :

72A

FET Type :

N-Channel

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Pin Count :

5

DS Breakdown Voltage-Min :

200V

Rds On (Max) @ Id, Vgs :

180m Ω @ 11A, 10V

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Single

Continuous Drain Current (ID) :

18A

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-5

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Configuration :

Single

Number of Elements :

1

Weight :

3.000003g

Drain to Source Voltage (Vdss) :

200V

Power Dissipation-Max :

125W Tc

Avalanche Energy Rating (Eas) :

430 mJ

Transistor Element Material :

SILICON

Width :

4.83mm

Length :

10.67mm

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Transistor Application :

SWITCHING

FET Feature :

Current Sensing

Rise Time :

51ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Turn On Delay Time :

14 ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T5

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

40

Height :

9.02mm

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

36 ns

Series :

HEXFET®

Number of Terminations :

5

ECCN Code :

EAR99