IRC740PBF
- Mfr.Part #
- IRC740PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-5
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 10A TO220-5
- Stock
- 18,399
- In Stock :
- 18,399
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSFM-T5
- FET Feature :
- Current Sensing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 14 ns
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 24 ns
- Series :
- HEXFET®
- Power Dissipation-Max :
- 125W Tc
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-5
- Continuous Drain Current (ID) :
- 10A
- Drain to Source Breakdown Voltage :
- 400V
- Drain-source On Resistance-Max :
- 0.55Ohm
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 66nC @ 10V
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 54 ns
- Avalanche Energy Rating (Eas) :
- 210 mJ
- Mounting Type :
- Through Hole
- Voltage - Rated DC :
- 400V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Rise Time :
- 25ns
- Pin Count :
- 5
- Pulsed Drain Current-Max (IDM) :
- 40A
- Number of Elements :
- 1
- Power Dissipation :
- 125W
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 6A, 10V
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 5
- Case Connection :
- DRAIN
- Current Rating :
- 10A
- Qualification Status :
- Not Qualified
- Published :
- 1997
- Mount :
- Through Hole
- Configuration :
- Single
- Datasheets
- IRC740PBF

N-Channel Tube 550m Ω @ 6A, 10V ±20V 1200pF @ 25V 66nC @ 10V TO-220-5
IRC740PBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 210 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1200pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=400V, the drain-source breakdown voltage is 400V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 54 ns.A maximum pulsed drain current of 40A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
IRC740PBF Features
the avalanche energy rating (Eas) is 210 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 40A.
IRC740PBF Applications
There are a lot of Vishay Siliconix
IRC740PBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| IRC730PBF | Vishay | 5,274 | MOSFET N-CH 400V 5.5A TO220-5 |
















