IRF1018ESLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

88 mJ

Continuous Drain Current (ID) :

79A

Turn On Delay Time :

13 ns

Fall Time (Typ) :

46 ns

Radiation Hardening :

No

Recovery Time :

39 ns

Published :

2004

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

79A Tc

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

55 ns

Vgs(th) (Max) @ Id :

4V @ 100µA

Rise Time :

35ns

Number of Pins :

3

Case Connection :

DRAIN

Mounting Type :

Through Hole

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Length :

10.668mm

Height :

9.65mm

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Packaging :

Tube

Drain-source On Resistance-Max :

0.0084Ohm

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Series :

HEXFET®

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Position :

Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Width :

4.826mm

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

110W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

No SVHC

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation :

110W

ECCN Code :

EAR99