IRF1310NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

140A

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

420 mJ

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Published :

1998

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

42A

Vgs (Max) :

±20V

Power Dissipation-Max :

3.8W Ta 160W Tc

Drain-source On Resistance-Max :

0.036Ohm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

DS Breakdown Voltage-Min :

100V

Rds On (Max) @ Id, Vgs :

36m Ω @ 22A, 10V

Surface Mount :

yes

Number of Elements :

1

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Configuration :

SINGLE WITH BUILT-IN DIODE